ZHENG, Z.; SHI, Y.; LIANG, X.; WANG, C. The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device. Semiconductor Science and Information Devices, [S. l.], v. 1, n. 1, p. 2–6, 2019. DOI: 10.30564/ssid.v1i1.606. Disponível em: https://journals.bilpubgroup.com/index.php/ssid/article/view/606. Acesso em: 4 dec. 2024.