M., B. N.; R., G. L.; S., K. M.; S., V. V. Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure. Semiconductor Science and Information Devices, [S. l.], v. 5, n. 1, p. 18–25, 2023. DOI: 10.30564/ssid.v5i1.6014. Disponível em: https://journals.bilpubgroup.com/index.php/ssid/article/view/6014. Acesso em: 22 dec. 2024.