Zheng, Z., Y. Shi, X. Liang, and C. Wang. “The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device”. Semiconductor Science and Information Devices, vol. 1, no. 1, Oct. 2019, pp. 2-6, doi:10.30564/ssid.v1i1.606.