Semiconductor Science and Information Devices https://journals.bilpubgroup.com/index.php/ssid <p>ISSN: 2661-3212(Online)</p> <p>Email: ssid@bilpublishing.com</p> <p>Follow the journal: <a style="display: inline-block;" href="https://twitter.com/SSID_Office" target="_blank" rel="noopener"><img style="width: 20px; position: relative; top: 5px; left: 5px;" src="https://journals.bilpubgroup.com/public/site/Twitter _logo.jpg" alt="" /></a></p> <p><a href="https://journals.bilpubgroup.com/index.php/ssid/about/submissions#onlineSubmissions" target="_black"><button class="cmp_button">Online Submissions</button></a></p> en-US ssid@bilpublishing.com (Managing Editor: Hathli Li) ojs@bilpublishing.com (IT SUPPORT:Amy) Tue, 31 Oct 2023 00:00:00 +0800 OJS 3.3.0.13 http://blogs.law.harvard.edu/tech/rss 60 Review on Activated Carbon for Supercapacitors https://journals.bilpubgroup.com/index.php/ssid/article/view/6171 <p>Carbon is a lavish element that has a large number of composite elements. Activated carbon is the main source for storing the charge in the Supercapacitor. The management of waste is a big issue in Kathmandu Valley, and by converting the waste into activated carbon the waste management is somehow solved. The wet blue leather waste is found to be more reliable for making supercapacitors than the other waste material. The lowest value of capacitance is found in the eggshell material.</p> Rajesh Shrestha, Narendra Phulara Copyright © 2023 Rajesh Shrestha, Narendra Phulara https://creativecommons.org/licenses/by-nc/4.0 https://journals.bilpubgroup.com/index.php/ssid/article/view/6171 Fri, 26 Jan 2024 00:00:00 +0800 Performance Evaluation of Junctionless Cylindrical Gate-All-Around FET for Low Power Applications https://journals.bilpubgroup.com/index.php/ssid/article/view/6075 <p>The advent of device miniaturization techniques and the evolution of very deep submicron technology have led to the increased prominence of short channel effects (SCEs) in conventional transistors (CTs). Now, in the era of nanoengineering and nano-wires, current research is centered around a novel device known as the Junctionless Field Effect Transistor (JLFET), which incorporates gate-all-around engineering applications. Given the challenges associated with scaling transistor sizes, such as creating high-quality junctions and changing doping concentrations (~1019 cm–3) over a 10 nm distance, JLFET emerges as a promising alternative to CTs. Notably, JLFET lacks junctions and doping concentration gradients. In this study, the authors have conducted a comprehensive analysis and performance evaluation of JLFET and CTs, specifically in the context of low-power applications. Various performance parameters of JLFET, including SS, DIBL, transconductance, output conductance, and Ion/Ioff, have been assessed. The findings indicate that JLFET exhibits reduced susceptibility to SCEs compared to CTs and demonstrates exceptional current driving capability.</p> Pooja Srivastava, Aditi Upadhyaya, Shekhar Yadav, C.M.S. Negi Copyright © 2023 Pooja Srivastava, Aditi Upadhyaya, Shekhar Yadav, C.M.S. Negi https://creativecommons.org/licenses/by-nc/4.0 https://journals.bilpubgroup.com/index.php/ssid/article/view/6075 Thu, 18 Jan 2024 00:00:00 +0800