Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements
DOI:
https://doi.org/10.30564/ssid.v1i2.1526Abstract
We report intrinsic photoconductivity studies on one of the least examinedlayered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistorswere fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurationsunder the illumination of 532 nm laser source. We measured photocurrentas a function of the incident optical power at several source-drain (bias)voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to thatin the two-terminal configuration. For an incident optical power of 90nW, the estimated photosensitivity and the external quantum efficiency(EQE) measured in two-terminal configuration are 0.5 A/W and 120%,respectively, under a bias voltage of 650 mV. Under the same conditions,the four-terminal measurements result in much higher values for both thephotoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. Thissignificant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contactresistance at the metal-semiconductor interface, which greatly impacts thecarrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configurationin previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides andtheir remarkable potential for optoelectronic applications.Keywords:
Field-effect transistors; Zirconium sulphide; Phototransistor; Responsivity; Quantum efficiencyReferences
[1] H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L.J. Li, M. Dubey, J. Kong, T. Palacios. Integrated circuits based on bilayer MoS2 transistors, Nano letters, 2012, 12: 4674.
[2] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS2 transistors, Nature nanotechnology, 2011, 6: 147.
[3] N. R. Pradhan, D. Rhodes, S. Feng, Y. Xin, S. Memaran, B.-H. Moon, H. Terrones, M. Terrones, and L. Balicas, Field-effect transistors based on few-layered α-MoTe2, ACS nano, 2014, 8: 5911.
[4] N. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. Ajayan, L. Balicas. Intrinsic carrier mobility of multi-layered mos2 field-effect transistors on SiO2, Applied Physics Letters, 2013, 102: 123105.
[5] N. R. Pradhan, D. Rhodes, Y. Xin, S. Memaran, L. Bhaskaran, M. Siddiq, S. Hill, P. M. Ajayan, L. Balicas. Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities, Acs Nano, 2014, 8: 7923.
[6] N. R. Pradhan, J. Ludwig, Z. Lu, D. Rhodes, M. M. Bishop, K. Thirunavukkuarasu, S. A. McGill, D. Smirnov, L. Balicas. High photoresponsivity and short photoresponse times in few-layered WSe2 transistors, ACS applied materials & interfaces, 2015, 7:12080.
[7] S. Memaran, N. R. Pradhan, Z. Lu, D. Rhodes, J. Lud- wig, Q. Zhou, O. Ogunsolu, P. M. Ajayan, D. Smirnov, A. Fernandez-Dom´ınguez, et al.. Pronounced photovoltaic response from multilayered transition-metal dichalcogenides pn-junctions, Nano letters, 2015, 15: 7532.
[8] N. R. Pradhan, Z. Lu, D. Rhodes, D. Smirnov E. Manousakis, L. Balicas. An optoelectronic switch based on intrinsic dual schottky diodes in ambipolar MoSe2 field-effect transistors, Advanced Electronic Materials, 2015, 1: 1500215.
[9] N. R. Pradhan, C. Garcia, B. Isenberg, D. Rhodes, S. Feng, S. Memaran, Y. Xin, A. McCreary, A. R. H. Walker, A. Raeliarijaona, et al.. Phase modulators based on high mobility ambipolar rese 2 field-effect transistors, Scientific reports, 2018, 8: 12745.
[10] C. Garcia, N. Pradhan, D. Rhodes, L. Balicas. S. McGill. Photogating and high gain in res2 field-effect transistors, Journal of Applied Physics, 2018, 124: 204306.
[11] G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, L. Colombo. Electronics based on two-dimensional materials, Nature nanotechnology, 2014, 9: 768.
[12] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nature nanotechnology, 2012, 7: 699.
[13] W. Zhang, Z. Huang, W. Zhang, Y. Li. Two-dimensional semiconductors with possible high room temperature mobility, Nano Research, 2014, 7: 1731.
[14] H. Guo, N. Lu, L. Wang, X. Wu, X. C. Zeng, Tuningelectronic and magnetic properties of early transitionmetal dichalcogenides via tensile strain, The Journal of Physical Chemistry C, 2014, 118: 7242.
[15] Y. Li, J. Kang, J. Li. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first- principles calculations, Rsc Advances, 2014, 4, 7396.
[16] A. Kumar, H. He, R. Pandey, P. Ahluwalia, K. Tankeshwar, Semiconductor-to-metal phase transition in monolayer ZrS2: Gga+ u study, in AIP Conference Proceedings (AIP Publishing, 2015, 1665: 090016.
[17] H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund Jr, S. T. Pantelides, K. I. Bolotin. Bandgap engineering of strained monolayer and bilayer MoS2, Nano letters, 2013, 13: 3626.
[18] T. Cheiwchanchamnangij, W. R. Lambrecht, Quasi-particle band structure calculation of monolayer, bilayer, and bulk MoS2, Physical Review B, 2012, 85: 205302.
[19] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Atomically thin MoS2: a new direct gap semiconductor, Physical review letters, 2010, 105: 136805.
[20] O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Raden-ovic, A. Kis. Ultrasensitive photodetectors based on monolayer MoS2, Nature nanotechnology, 2013, 8: 497.
[21] Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, H. Zhang. Single-layer MoS2 phototransistors, ACS nano, 2011, 6: 74.
[22] D. Kufer, G. Konstantatos. Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed, Nano letters, 2015, 15: 7307.
[23] J. Pak, J. Jang, K. Cho, T.-Y. Kim, J.-K. Kim, Y. Song, W.-K. Hong, M. Min, H. Lee, T. Lee. Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine, Nanoscale, 2015, 7: 18780.
[24] G. Wu, X. Wang, Y. Chen, Z. Wang, H. Shen, T. Lin, W. Hu, J. Wang, S. Zhang, X. Meng, et al.. Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism, Nanotechnology, 2018, 29: 485204.
[25] W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, et al.High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared, Advanced materials, 2012, 24: 5832.
[26] D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, J.-H. He. Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments, Acs Nano, 2013, 7: 3905.
[27] H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, S. Im. Mos2 nanosheet phototransistors with thickness-modulated optical energy gap, Nano letters, 2012, 12: 3695
[28] A. Abderrahmane, P. Ko, T. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors, Nanotechnology 25, 365202 (2014).
[29] N. Pradhan, D. Rhodes, S. Memaran, J. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Perea-Lopez, A. Elias, M. Terrones, et al.. Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors, Scientific reports, 2015, 5: 8979.
[30] W. Zhang, M.-H. Chiu, C.-H. Chen, W. Chen, L.-J. Li, A. T. S. Wee. Role of metal contacts in high-performance phototransistors based on wse2 monolayers, ACS nano, 2014, 8: 8653.
[31] N. R. Pradhan, C. Garcia, J. Holleman, D. Rhodes, C. Parker, S. Talapatra, M. Terrones, L. Balicas, S. A. McGill,Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements, 2D Materials, 2016, 3: 041004.
[32] N. Huo, S. Yang, Z. Wei, S.-S. Li, J.-B. Xia, J. Li, Photoresponsive and gas sensing field-effect transistors based on multilayer WS2 nanoflakes, Scientific reports, 2014, 4: 5209.
[33] N. R. Pradhan, A. McCreary, D. Rhodes, Z. Lu, S. Feng, E. Manousakis, D. Smirnov, R. Namburu, M. Dubey, A. R. Hight Walker, et al.. Metal to insulator quantum-phase transition in few-layered ReS2, Nano letters, 2015, 15: 8377.
[34] Y. Wen, Y. Zhu, S. Zhang. Low temperature synthesis of ZrS2 nanoflakes and their catalytic activity, RSC Advances, 2015, 5: 66082.
[35] S. Manas-Valero, V.Garcıa-Lopez, A.Cantarero, M. Galbiati. Raman spectra of ZrS2 and ZrSe2 from bulk to atomically thin layers, Applied sciences, 2016, 6: 264.
[36] X. Wang, L. Huang, X.-W. Jiang, Y. Li, Z. Wei, J. Li. Large scale ZrS2 atomically thin layers, Journal of Materials Chemistry C, 2016, 4: 3143.
[37] M. Zhang, Y. Zhu, X. Wang, Q. Feng, S. Qiao, W. Wen, Y. Chen, M. Cui, J. Zhang, C. Cai, et al.. Controlled synthesis of ZrS2 monolayer and few layers on hexagonal boron nitride, Journal of the American Chemical Society, 2015, 137: 7051.
[38] Y. Zhu, X. Wang, M. Zhang, C. Cai, L. Xie. Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride, Nano Research, 2016, 9: 2931.
[39] Y. Shimazu, Y. Fujisawa, K. Arai, T. Iwabuchi, and K. Suzuki, Synthesis and characterization of zirconium disulfide single crystals and thin-film transistors based on multilayer zirconium disulfide flakes, ChemNanoMat, 2018, 4: 1078.
[40] M. Mattinen, G. Popov, M. Vehkamaki, P. J. King, K. Mizohata, P. Jalkanen, J. Raisanen, M. Leskela, M. Ritala. Atomic layer deposition of emerging 2d semiconductors, HfS2 and ZrS2, for optoelectronics, Chemistry of Materials,2019, 31: 5713.
[41] X. Li, J. Carey, J. Sickler, M. Pralle, C. Palsule, C. Vineis, Silicon photodiodes with high photoconductive gain at room temperature, Optics Express, 2012, 20: 5518.
[42] R. K. Ulaganathan, Y. Y. Lu, C. J. Kuo, S. R. Tamalampudi, R. Sankar, K. M. Boopathi, A. Anand, K. Yadav, R. J. Mathew, C.-R. Liu, et al.. High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors, Nanoscale, 2016, 8: 2284.
[43] N. Perea-Lopez, Z. Lin, N. R. Pradhan, A. Iniguez Rabago, A. L. Elıas, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, et al., CVD-grown monolayered MoS2 as an effective photosensor operating at low- voltage, 2D Materials 1, 011004, 2014.
[44] X. Zhang, Z. Meng, D. Rao, Y. Wang, Q. Shi, Y. Liu, H. Wu, K. Deng, H. Liu, R. Lu. Efficient band structure tuning, charge separation, visible-light response in ZrS2-based Van der Waals heterostructures, Energy & Environmental Science, 2016, 9: 841.
[45] H. So, D. G. Senesky, ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors, Applied Surface Science, 2016, 387: 280.
[46] D. S. Tsai, W. C. Lien, D. H. Lien, K. M. Chen, M. L. Tsai, D. G. Senesky, Y. C. Yu, A. P. Pisano, J. H. He, Solar-blind photodetectors for harsh electronics, Scientific reports, 2013, 3: 2628.
[47] C. Lien, D. S. Tsai, S. H. Chiu, D. G. Senesky, R. Maboudian, A. P. Pisano, and J. H. He, Low temperature, ion beam-assisted sic thin films with antireflective ZnO nanorod arrays for high temperature photodetection, IEEE Electron Device Letters, 2011, 32, 1564.
[48] T. C. Wei, D. S. Tsai, P. Ravadgar, J. J. Ke, M. L. Tsai, D. H. Lien, C. Y. Huang, R. H. Horng, J. H. He. See-through Ga2O3 solar-blind photodetectors for use in harsh environments, IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20: 112.
Downloads
How to Cite
Issue
Article Type
License
Copyright © 2020 Rukshan M. Tanthirige, Carlos Garcia, Saikat Ghosh, Frederic Jackson II, Jawnaye Nash, Daniel Rosenmann, Ralu Divan, Liliana Stan, Anirudha V. Sumant, Stephen A. McGill, Nihar R. Pradhan
![Creative Commons License](http://i.creativecommons.org/l/by-nc/4.0/88x31.png)
This is an open access article under the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) License.