Semiconductor Science and Information Devices

Abstract: Nonlinear system identification concerns the determination of the modelstructure and its parameters. Although the designers often seek the bestmodel for each system, it can be tricky to determine, at the same time, thebest structure and the parameters which optimize the model performance.This paper proposes the use of a Genetic Algorithm, GA, and the Levenberg-Marquardt, LM,... More

Abstract: In this study, we fabricate Si/SiGe core-shell Junctionless accumulationmode (JAM)FinFET devices through a rapid and novel process with fourmain steps, i.e. e-beam lithography definition, sputter deposition, alloycombination annealing, and chemical solution etching. The height of Sicore is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. Afterfinishing the fabrication of devices, we... More

Abstract: We report intrinsic photoconductivity studies on one of the least examinedlayered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistorswere fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurationsunder the illumination of 532 nm laser source. We measured photocurrentas a function of the incident optical power at several source-drain (bias)voltages. We... More

Abstract: Copper Zinc Antimony Sulfide (CZAS) is derived from Copper AntimonySulfide (CAS), a famatinite class of compound. In the current paper, thefirst step for using Copper, Zinc, Antimony and Sulfide as materials inmanufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide, CZAS(Cu1.18Zn0.40Sb1.90S7.2) semiconductor and using it instead of CopperTin Sulfide, CTS... More