Congratulations to Prof. Ahmed Saeed Hassanien for becoming the Editor-in-Chief of Semiconductor Science and Information Devices!
2023-04-28
Aims and Scope
Semiconductor Science and Information Devices
ISSN: 2661-3212 (Online)
Vol. 1 , Iss. 2 (October 2019)
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Article
Heuristic Order Reduction of NARX-OBF models Applied to Nonlinear System Identification
1-10
Article ID: 1341 DOI：https://doi.org/10.30564/ssid.v1i2.1341
286 (Abstract)
90 (Download)
Abstract:
Nonlinear system identification concerns the determination of the modelstructure and its parameters. Although the designers often seek the bestmodel for each system, it can be tricky to determine, at the same time, thebest structure and the parameters which optimize the model performance.This paper proposes the use of a Genetic Algorithm, GA, and the Levenberg-Marquardt, LM,... More -
Article
A Novel Process for SiGe Core-Shell JAM Transistors Fabrication and Thermal Annealing Effect on Its Electrical Performance
11-18
Article ID: 1399 DOI：https://doi.org/10.30564/ssid.v1i2.1399
311 (Abstract)
118 (Download)
Abstract:
In this study, we fabricate Si/SiGe core-shell Junctionless accumulationmode (JAM)FinFET devices through a rapid and novel process with fourmain steps, i.e. e-beam lithography definition, sputter deposition, alloycombination annealing, and chemical solution etching. The height of Sicore is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. Afterfinishing the fabrication of devices, we... More -
Article
Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements
19-28
Article ID: 1526 DOI：https://doi.org/10.30564/ssid.v1i2.1526
664 (Abstract)
181 (Download)
Abstract:
We report intrinsic photoconductivity studies on one of the least examinedlayered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistorswere fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurationsunder the illumination of 532 nm laser source. We measured photocurrentas a function of the incident optical power at several source-drain (bias)voltages. We... More -
Article
Infrastructure of Synchrotronic Biosensor Based on Semiconductor Device Fabrication for Tracking, Monitoring, Imaging, Measuring, Diagnosing and Detecting Cancer Cells
29-57
Article ID: 1827 DOI：https://doi.org/10.30564/ssid.v1i2.1827
1308 (Abstract)
120 (Download)
Abstract:
Copper Zinc Antimony Sulfide (CZAS) is derived from Copper AntimonySulfide (CAS), a famatinite class of compound. In the current paper, thefirst step for using Copper, Zinc, Antimony and Sulfide as materials inmanufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide, CZAS(Cu1.18Zn0.40Sb1.90S7.2) semiconductor and using it instead of CopperTin Sulfide, CTS... More