Semiconductor Science and Information Devices

Articles

• Heuristic Order Reduction of NARX-OBF models Applied to Nonlinear System Identification

  Elder Oroski, Beatriz Pês, Adolfo Bauchspiess, Marco Antonio Freitas do Egito Coelho

  1-10

  
  Article ID: 1341    DOI：https://doi.org/10.30564/ssid.v1i2.1341
  
  68  (Download)
  

  Abstract:

  Nonlinear system identification concerns the determination of the model

  structure and its parameters. Although the designers often seek the best

  model for each system, it can be tricky to determine, at the same time, the

  best structure and the parameters which optimize the model performance.

  This paper proposes the use of a Genetic Algorithm, GA, and the Leven

  berg-Marquardt, LM,... More

  • PDF

• A Novel Process for SiGe Core-Shell JAM Transistors Fabrication and Thermal Annealing Effect on Its Electrical Performance

  Ashish Kumar, Wen-Hsi Lee

  11-18

  
  Article ID: 1399    DOI：https://doi.org/10.30564/ssid.v1i2.1399
  
  66  (Download)
  

  Abstract:

  In this study, we fabricate Si/SiGe core-shell Junctionless accumulation

  mode (JAM)FinFET devices through a rapid and novel process with four

  main steps, i.e. e-beam lithography definition, sputter deposition, alloy

  combination annealing, and chemical solution etching. The height of Si

  core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. After

  finishing the fabrication of devices, we... More

  • PDF

• Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements

  Rukshan M. Tanthirige, Carlos Garcia, Saikat Ghosh, Frederick Jackson II, Jawnaye Nash, Daniel Rosenmann, Ralu Divan, Liliana Stan, Anirudha V. Sumant, Stephen A. McGill, Paresh C. Ray, Nihar R. Pradhan

  19-28

  
  Article ID: 1526    DOI：https://doi.org/10.30564/ssid.v1i2.1526
  
  87  (Download)
  

  Abstract:

  We report intrinsic photoconductivity studies on one of the least examined

  layered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistors

  were fabricated on the Si/SiO2 substrate and photoconductivity measure

  ments were performed using both two- and four-terminal configurations

  under the illumination of 532 nm laser source. We measured photocurrent

  as a function of the incident optical power at several source-drain (bias)

  voltages. We... More

  • PDF

• Infrastructure of Synchrotronic Biosensor Based on Semiconductor Device Fabrication for Tracking, Monitoring, Imaging, Measuring, Diagnosing and Detecting Cancer Cells

  Alireza Heidari

  29-57

  
  Article ID: 1827    DOI：https://doi.org/10.30564/ssid.v1i2.1827
  
  75  (Download)
  

  Abstract:

  Copper Zinc Antimony Sulfide (CZAS) is derived from Copper Antimony

  Sulfide (CAS), a famatinite class of compound. In the current paper, the

  first step for using Copper, Zinc, Antimony and Sulfide as materials in

  manufacturing synchrotronic biosensor-namely increasing the sensitivi

  ty of biosensor through creating Copper Zinc Antimony Sulfide, CZAS

  (Cu1.18Zn0.40Sb1.90S7.2) semiconductor and using it instead of Copper

  Tin Sulfide, CTS... More

  • PDF