View Vol. 1 , Iss. 2 (October 2019)

Semiconductor Science and Information Devices

ISSN: 2661-3212 (Online)

Vol. 1 , Iss. 2 (October 2019)

Articles

  • Heuristic Order Reduction of NARX-OBF models Applied to Nonlinear System Identification

    Elder Oroski, Beatriz Pês, Adolfo Bauchspiess, Marco Antonio Freitas do Egito Coelho
    1-10

    Article ID: 1341
    194  (Abstract) 40  (Download)
    Nonlinear system identification concerns the determination of the modelstructure and its parameters. Although the designers often seek the bestmodel for each system, it can be tricky to determine, at the same time, thebest structure and the parameters which optimize the model performance.This paper proposes the use of a Genetic Algorithm, GA, and the Levenberg-Marquardt, LM,...

  • A Novel Process for SiGe Core-Shell JAM Transistors Fabrication and Thermal Annealing Effect on Its Electrical Performance

    Ashish Kumar, Wen-Hsi Lee
    11-18

    Article ID: 1399
    233  (Abstract) 35  (Download)
    In this study, we fabricate Si/SiGe core-shell Junctionless accumulationmode (JAM)FinFET devices through a rapid and novel process with fourmain steps, i.e. e-beam lithography definition, sputter deposition, alloycombination annealing, and chemical solution etching. The height of Sicore is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. Afterfinishing the fabrication of devices, we...

  • Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements

    Rukshan M. Tanthirige, Carlos Garcia, Saikat Ghosh, Frederick Jackson II, Jawnaye Nash, Daniel Rosenmann, Ralu Divan, Liliana Stan, Anirudha V. Sumant, Stephen A. McGill, Paresh C. Ray, Nihar R. Pradhan
    19-28

    Article ID: 1526
    337  (Abstract) 47  (Download)
    We report intrinsic photoconductivity studies on one of the least examinedlayered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistorswere fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurationsunder the illumination of 532 nm laser source. We measured photocurrentas a function of the incident optical power at several source-drain (bias)voltages. We...

  • Infrastructure of Synchrotronic Biosensor Based on Semiconductor Device Fabrication for Tracking, Monitoring, Imaging, Measuring, Diagnosing and Detecting Cancer Cells

    Alireza Heidari
    29-57

    Article ID: 1827
    679  (Abstract) 39  (Download)
    Copper Zinc Antimony Sulfide (CZAS) is derived from Copper AntimonySulfide (CAS), a famatinite class of compound. In the current paper, thefirst step for using Copper, Zinc, Antimony and Sulfide as materials inmanufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide, CZAS(Cu1.18Zn0.40Sb1.90S7.2) semiconductor and using it instead of CopperTin Sulfide, CTS...