Congratulations to Prof. Ahmed Saeed Hassanien for becoming the Editor-in-Chief of Semiconductor Science and Information Devices!
2023-04-28
Aims and Scope
Semiconductor Science and Information Devices
ISSN: 2661-3212 (Online)
Vol. 5 , Iss. 1 (April 2023)
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Editorial
Minus Infinity Plus Infinity
Kasturi Vasudevan
1-2
Article ID: 5644 DOI：https://doi.org/10.30564/ssid.v5i1.5644
112 (Abstract)
107 (Download)
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Article
Optimization of ITO/V2O5/Alq3/TPBi/BPhen/LiF/Al Layers Configuration for OLED and Study of Its Optical and Electrical Characteristics
Ritu, Sandhya Kattayat, H. K. Sublania, S. Z. Hashmi, Jasgurpreet Singh, P. A. Alvi
3-10
Article ID: 5977 DOI：https://doi.org/10.30564/ssid.v5i1.5977
160 (Abstract)
115 (Download)
Abstract:
Nowadays, OLEDs have shown aesthetic potential in smart cards, sensor displays, other electronic devices, sensitive medical devices and signal monitoring etc. due to their wide range of applications like low power consumption, high contrast ratio, speed highly electroluminescent, wide viewing angle and fast response time. In this paper, a highly efficient organic LED ITO/V2O5/Alq3/TPBi/BPhen/LiF/Al with... More
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Article
Sub-nano Layers of Li, Be, and Al on the Si(100) Surface: Electronic Structure and Silicide Formation
Victor Zavodinsky, Olga Gorkusha
11-17
Article ID: 5982 DOI：https://doi.org/10.30564/ssid.v5i1.5982
63 (Abstract)
45 (Download)
Abstract:
Within the framework of the density functional theory and the pseudopotential method, the electronic structure calculations of the “metal-Si(100)” systems with Li, Be and Al as metal coverings of one to four monolayers (ML) thickness, were carried out. Calculations showed that band gaps of 1.02 eV, 0.98 eV, and 0.5 eV, respectively, appear in the... More
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Article
Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure
Bogatov N. M., Grigoryan L. R., Kovalenko M. S., Volodin V. S.
18-25
Article ID: 6014 DOI：https://doi.org/10.30564/ssid.v5i1.6014
78 (Abstract)
40 (Download)
Abstract:
Nowadays, radiation engineering is a promising direction in the creation of semiconductor devices. The proton irradiation is used to controllably change the optical, electrical, recombination, mechanical and structural properties of the semiconductors. Low-energy protons make it possible to purposefully change material properties near the surface where the n+ -p junction is located. In this paper,... More
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Article
Cooperative Relaying in a Three User Downlink NOMA System Using Dynamic Power Allocation
Mwewa Mabumba, Simon Tembo, Lukumba Phiri
26-32
Article ID: 6028 DOI：https://doi.org/10.30564/ssid.v5i1.6028
97 (Abstract)
39 (Download)
Abstract:
Non-orthogonal multiple access (NOMA) represents the latest addition to the array of multiple access techniques, enabling simultaneous servicing of multiple users within a singular resource block in terms of time, frequency, and code. A typical NOMA configuration comprises a base station along with proximate and distant users. The proximity users experience more favorable channel conditions in contrast to... More