Ordin S.V.
Ioffe Institute RAS., Russia
The ancient emission formulas of Langmuir and Richardson entered the calculations of subtle effects in semiconductor devices as basic ones. But, in the physics of semiconductor devices, these models have long played a purely decorative role, since they can describe in the most rough approximation only individual sections of the I – V characteristic. But it is precisely the fact that these formulas are basic when describing the barrier current-voltage characteristics (CVC) and prevented the consideration and use of thermoelectric effects in materials on a nano-scale. Thus, as these basic emission models actually imposed a ban on the MEASURABILITY of local thermoelectric effects, the existence of which has already been proven both phenomenologically and experimentally. The quantum transition technique is based on classical models. But it can also be used to correct these classic formulas. The calculation of the spatial transition of electrons over the potential barrier, taking into account the polarity of the kinetic energy, gives currents that are significantly higher than the currents of Langmuir and Richardson, including in the initial section of the I – V characteristic. Moreover, ballistic currents are concentrated at energy levels close to the threshold. This effect of condensation of electrons flowing down the barrier transforms the "anomalous" Seebeck coefficients into normal EASURABLE Local Thermal EMF, including in p-n junctions.
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[32] Ordin S.V., Sokolov I.A., Dimension Effect in Lattice Absorption of Silicon Carbide, Technical Digest of the 7th International Conference on Optical Technology, Optical Sensors and Measuring techniques 30 May-1 June 2005 Nuremberg Exhibition Centre, Germany, OPTO2005 conference paper 9,p.121-124.
