M. M. Idris
Department of Physics, Federal University of Technology, P.M.B 65, Minna, Nigeria
Department of Physics, Nasarawa State University, P.M.B 1022, Keffi, Nigeria
Department of Physics, University Putra, 43400, Malaysia
I. O. Olarinoye
Department of Physics, Federal University of Technology, P.M.B 65, Minna, Nigeria
M. T. Kolo
Department of Physics, Federal University of Technology, P.M.B 65, Minna, Nigeria
S. O. Ibrahim
Department of Physics, Federal University of Technology, P.M.B 65, Minna, Nigeria
J. K. Audu
Department of Medical Physics and Radiotherapy, National Hospital, P.M.B 425, Abuja, Nigeria
This study reports the dosimetric response of a (ZnO)0.2(TeO2)0.8 thin film sensor irradiated with high-energy X-ray radiation at various doses. The spray pyrolysis method was used for the film deposition on soda-lime glass substrate using zinc acetate dehydrate and tellurium dioxide powder as the starting precursors. The structural and morphological properties of the film were determined. The I-V characteristics measurements were performed during irradiation with a 6 MV X-ray beam from a Linac. The results revealed that the XRD pattern of the AS-deposited thin film is non-crystalline (amorphous) in nature. The FESEM image shows the non-uniform shape of nanoparticles agglomerated separately, and the EDX spectrum shows the presence of Te, Zn, and O in the film. The I-V characteristics measurements indicate that the current density increases linearly with X-ray doses (0-250 cGy) for all applied voltages (1-6 V). The sensitivity of the thin film sensor has been found to be in the range of 0.37-0.94 mA/cm2 /Gy. The current-voltage measurement test for fading normalised in percentage to day 0 was found in the order of day 0 > day 15 > day 30 > day 1 > day 2. These results are expected to be beneficial for fabricating cheap and practical X-ray sensors.
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