Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

Authors

  • Bogatov N. M.

    Department of Physics and Information Systems, Kuban State University, Krasnodar, 350040, Russia
  • Grigoryan L. R.

    Department of Physics and Information Systems, Kuban State University, Krasnodar, 350040, Russia
  • Kovalenko M. S.

    Department of Physics and Information Systems, Kuban State University, Krasnodar, 350040, Russia
  • Volodin V. S.

    Department of Physics and Information Systems, Kuban State University, Krasnodar, 350040, Russia

DOI:

https://doi.org/10.30564/ssid.v5i1.6014
Received: 8 September 2023 | Revised: 1 November 2023 | Accepted: 3 November 2023 | Published Online: 10 November 2023

Abstract

Nowadays, radiation engineering is a promising direction in the creation of semiconductor devices. The proton irradiation is used to controllably change the optical, electrical, recombination, mechanical and structural properties of the semiconductors. Low-energy protons make it possible to purposefully change material properties near the surface where the n+ -p junction is located. In this paper, the impact of low-energy protons on the electro physical parameters of n+ -p-p+ silicon photoelectric converters (SPC) is analyzed. The current-voltage characteristics and switching time of these SPCs are measured. The switching time is determined using rectangular bipolar voltage pulses with an amplitude of 10 mV, a frequency of 200 kHz, or a frequency of 1 MHz. A theoretical and experimental analysis of the obtained results is performed. The comparison of experimental data with the results of calculations shows that protons with an energy of 180 keV and a dose of 1015 cm–2 create two regions in the space charge region of the n+ -p junction with different switching times of 4.2 × 10–7 s and 5.5 × 10–8 s. SPC frequency characteristics have been improved by reducing the effective lifetime by 5-10 times. This effect can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

Keywords:

Silicon; n -p junction; Lifetime; Proton; Pulse characteristic

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How to Cite

M., B. N., R., G. L., S., K. M., & S., V. V. (2023). Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure. Semiconductor Science and Information Devices, 5(1), 18–25. https://doi.org/10.30564/ssid.v5i1.6014

Issue

Vol. 5 , Iss. 1 (April 2023)

Article Type

Article

License

Copyright © 2023 Bogatov N. M., Grigoryan L. R., Kovalenko M. S., Volodin V. S.

Creative Commons License

This is an open access article under the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) License.

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