The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device

Authors

  • Zhen Zheng State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
  • Yuhao Shi State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
  • Xinyu Liang State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
  • Chunqing Wang State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China

DOI:

https://doi.org/10.30564/ssid.v1i1.606

Abstract

In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO3 (BTO) and ferromagnetic material Ni0.5Zn0.5Fe2O4 (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.

Keywords:

Capacitor-inductor; Integrated device; BTO film; NZFO film; Anneal temperature

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How to Cite

Zheng, Z., Shi, Y., Liang, X., & Wang, C. (2019). The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device. Semiconductor Science and Information Devices, 1(1), 2–6. https://doi.org/10.30564/ssid.v1i1.606

Issue

Vol. 1 , Iss. 1 (April 2019)

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