Ge-based Medium Wave Infrared MCT 1280 × 1024 Focal Plane Detector


  • Jun Jiang Kunming institute of physics, Kunming, Yunnan, 650223, China



Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process. The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns. Its main photoelectric properties are average NETD equivalent to 18.5 mK, non-uniformity equivalent to 7.5%, operability equivalent to 98.97%. The paper also studies the substrate-removal technique on Germanium-based chip, which improves the stability and reliability of detector.


Germanium substrate, Megapixel, Mercury cadmium tellurium, Medium wave focal plane detector, Back thinning


[1] Nelms, N., Minoglou, K., Voland, C., et al., 2015. Visible and infrared detector development supported by the European Space Agency. Proceedings of SPIE. 9639, 96390O.

[2] Yang, J.R., 2012. Physics and technology of HgCdTe materials. Beijing: National Defense Industry Press.

[3] Li, Y.H., Yang, Ch.Zh., et al., August 2015. Molecular beam epitaxy CdTe films on 4-inch Ge substrates The 11th National molecular beam epitaxy conference.

[4] Yang, Ch.Zh., Li, Y.H., et al., August 2015. Pretreatment of 3-inch Ge (211) substrate for MBE growth. 2015 academic conference of China Optical Society.

[5] He, L., Yang, D.J., Ni, G.Q., et al., 2011. Introduction to advanced focal plane technology. Beijing: National Defense Industry Press.

[6] Tian, L.P., Zhu, Y.F., Liu, X.Y., et al., 2013. Infrared technology. 35(10), 629-631.


How to Cite

Jiang, J. (2022). Ge-based Medium Wave Infrared MCT 1280 × 1024 Focal Plane Detector. Journal of Electronic & Information Systems, 4(1), 10–17.


Article Type